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About this Engineering article
Location of trapped charge in aluminum-implanted SiO2: D. J. DiMaria, D. R. Young, W. R. Hunter and C. M. Serrano. IBM J. Res. Dev. 22, (3) 289 (May 1978) is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)
- Published
- 1978
- Language
- EN
- Field
- Engineering (Physical Sciences)