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Tunneling conductance of graphene NIS junctions by Bhattacharjee, Subhro; Sengupta, K. is a scholarly article available to read on EtoBox.

What is Tunneling conductance of graphene NIS junctions about?

We show that in contrast to conventional normal metal-insulator-superconductor (NIS) junctions, the tunneling conductance of a NIS junction in graphene is an oscillatory function of the effective barrier strength of the insulating region, in the limit of a thin barrier. The amplitude of these oscillations are maximum for aligned Fermi surfaces of the normal and superconducting regions and vanishes for large Fermi surface mismatch. The zero-bias tunneling conductance, in sharp contrast to its counterpart in conventional NIS junctions, becomes maximum for a finite barrier strength. We also suggest experiments to test these predictions.

Author

Bhattacharjee, Subhro; Sengupta, K.

Published

2006

Language

EN