About this Physics and Astronomy article

Electrical Properties of the Si Implantation in Mg Doped p-GaN by Wei-Chih Lai; M. Yokoyama; Chiung-Chi Tsai; Chen-Shiung Chang; Jan-Dar Guo; Jian-Shih Tsang; Shih-Hsiung Chan is a Physics and Astronomy article available to read on EtoBox.

This work performs Si ion implantation to activate and convert the electrical conduction of p-GaN films from p-type to n-type. Multiple implantation method is used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implantation energies for the multiple implantation are 40, 100, and 200 keV. The implantation dose is 5 Â 10 15 cm 2 for each implantation energy. After implantation, the samples were annealed in an N 2 ambient for different annealing temperatures and annealing times. The activation efficiency reaches as high as 20% when annealing the sample at 1000 o C,. The carrier activation energy is about 720 meV. The low activation energy indicates that the hopping process mechanism is the dominant mechanism for the activation of the Si implant in p-GaN. In addition, the rectifying I±V characteristic of the p±n GaN diode is also examined.

Author

Wei-Chih Lai; M. Yokoyama; Chiung-Chi Tsai; Chen-Shiung Chang; Jan-Dar Guo; Jian-Shih Tsang; Shih-Hsiung Chan

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)

Published

1999

Language

EN

Field

Physics and Astronomy (Physical Sciences)