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What is MGF4961B Super Low Noise HEMT Guide about?

This document provides information on the MGF4961B super low noise InGaAs HEMT (High Electron Mobility Transistor) from Mitsubishi Semiconductor. Key features include a low noise figure of 0.7dB and high associated gain of 13.5dB at 20GHz. It is designed for use in K band amplifiers and other microwave applications requiring low noise. Electrical characteristics and recommended bias conditions are provided.

Author

Wilder Morales

Language

EN