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Optimization of underlying layer and the device structure for group‐III‐nitride‐based UV emitters on sapphire by K. Iida; H. Watanabe; K. Takeda; F. Mori; H. Tsuzuki; Y. Yamashita; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki; H. Maruyama; T. Takagi; A. Bandoh is a scholarly article available to read on EtoBox.

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## Abstract Epitaxial lateral overgrowth (ELO) was applied for the growth of AlGaN on a sapphire substrate by metalorganic vapor phase epitaxy. Among several processes, the ELO of AlGaN on grooved AlGaN showed the best surface morphology and the lowest dark‐spot density of 1×10^8^ cm^–2^ as measured using cathodoluminescence. The light output power of a UV LED fabricated on ELO‐Al~0.25~Ga~0.75~N on grooved Al~0.25~Ga~0.75~N was the strongest among several UV LEDs fabricated by different processes. The effect of the Al composition in the electron‐blocking (EB) layer on the performance of UV LEDs was investigated. The UV LED with a low‐Al‐content EB layer showed high output power under a low‐injection condition, while the output power of a UV LED with a high‐Al‐content EB layer did not saturate even under a high‐injection condition. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Author

K. Iida; H. Watanabe; K. Takeda; F. Mori; H. Tsuzuki; Y. Yamashita; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki; H. Maruyama; T. Takagi; A. Bandoh

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2008

Language

EN