Skip to content

Opening book details…

About this scholarly article

Electrical Properties of Bulk Silicon Dioxide and SiO[sub 2]/Si Interface Formed by Tetraethylorthosilicate-Ozone Chemical Vapor Deposition by Kim, Hyo-Uk; Rhee, Shi-Woo is a scholarly article available to read on EtoBox.

Author
Kim, Hyo-Uk; Rhee, Shi-Woo
Publisher
The Electrochemical Society; Electrochemical Society, Inc. (ISSN 0013-4651)
Published
2000

More by Kim, Hyo-Uk; Rhee, Shi-Woo

Browse all works by Kim, Hyo-Uk; Rhee, Shi-Woo