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Stacking Domain Morphology in Epitaxial Graphene on Silicon Carbide by de Jong, Tobias A.; Visser, Luuk; Jobst, Johannes; Tromp, Ruud M.; van der Molen, Sense Jan is a scholarly article available to read on EtoBox.

What is Stacking Domain Morphology in Epitaxial Graphene on Silicon Carbide about?

Terrace-sized, single-orientation graphene can be grown on top of a carbon buffer layer on silicon carbide by thermal decomposition. Despite its homogeneous appearance, a surprisingly large variation in electron transport properties is observed. Here, we employ Aberration-Corrected Low-Energy Electron Microscopy (AC-LEEM) to study a possible cause of this variability. We characterize the morphology of stacking domains between the graphene and the buffer layer of high-quality samples. Similar to the case of twisted bilayer graphene, the lattice mismatch between the graphene layer and the buffer layer at the growth temperature causes a moir\'e pattern with domain boundaries between AB and BA stackings. We analyze this moir\'e pattern to characterize the relative strain and to count the number of edge dislocations. Furthermore, we show that epitaxial graphene on silicon carbide is close to a phase transition, causing intrinsic disorder in the form of co-existence of anisotropic stripe domains and isotropic trigonal domains. Using adaptive geometric phase analysis, we determine the precise relative strain variation caused by these domains. We observe that the step edges of the SiC subs

Author

de Jong, Tobias A.; Visser, Luuk; Jobst, Johannes; Tromp, Ruud M.; van der Molen, Sense Jan

Published

2022

Language

EN