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Temperature- and excitation density dependency of photoluminescence spectra in InGaN/GaN-heterostructures by C. Vierheilig; H. Braun; U. T. Schwarz; W. Wegscheider; E. Baur; U. Strauß; V. Härle is a Engineering article available to read on EtoBox.

What is Temperature- and excitation density dependency of photoluminescence spectra in InGaN/GaN-heterostructures about?

## Abstract We study the lateral diffusion of photogenerated carriers within InGaN/GaN quantum wells by scanning in the focal plane of our confocal microscope. The photoluminescence (PL) images are analyzed at varying excitation densities in the temperature range between 4 K and room temperature. The results of a blue and a green emitting sample are discussed in context of reported diffusion lengths for InGaN/GaN quantum wells. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Author

C. Vierheilig; H. Braun; U. T. Schwarz; W. Wegscheider; E. Baur; U. Strauß; V. Härle

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2007

Language

EN

Field

Engineering (Physical Sciences)