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About this Engineering article
Band-to-band tunnelling model of gate induced drain leakage current in silicon MOS transistors by Jomaah, J.; Ghibaudo, G.; Balestra, F. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Jomaah, J.; Ghibaudo, G.; Balestra, F.
- Publisher
- The Institution of Electrical Engineers; Institution of Electrical Engineers; Institute of Electrical Engineers; Institution of Engineering and Technology (IET) (ISSN 0013-5194)
- Published
- 1996
- Field
- Engineering (Physical Sciences)