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This article discusses the design and analysis of a PCB-embedded 1.2 kV SiC MOSFET half-bridge package intended for a 22 kW AC-DC converter, emphasizing its low loop inductance and integrated gate driver. The package achieves improved thermal and electrical performance, with a maximum temperature below 175 °C and a peak efficiency of 98.2%, making it suitable for electric vehicle applications. The research highlights the advantages of high-density integration in power electronics, particularly through the u

Author

bichuang968

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EN