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Gap properties of and : Electrical resistivity and tunnelling spectroscopy studies by M. Bat’ková; I. Bat’ko; E.S. Konovalova; N. Shitsevalova; Y. Paderno is a Physics and Astronomy article available to read on EtoBox.

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We report results of electrical resistivity studies below 100 K and tunnelling spectroscopy studies at 4.2 K for SmB 6 and YbB 12 samples. The resistivity results of both systems exhibit temperature activated behavior with several activation energies. The tunnelling studies show a non-zero differential conductance at and in the vicinity of zero bias voltage, indicating a presence of the states in the gap region. Results can be plausibly understood within the conception of ''classical'' heavily doped semiconductors, however, the shapes of differential conductance curves reminiscent of correlation pseudogap (like in FeSi) existence.

Who reads Gap properties of and : Electrical resistivity and tunnelling spectroscopy studies?

Author

M. Bat’ková; I. Bat’ko; E.S. Konovalova; N. Shitsevalova; Y. Paderno

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0921-4526)

Published

2006

Language

EN

Field

Physics and Astronomy (Physical Sciences)