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What is Interface States of MOS Devices Based On Aligned CNT Arrays about?

This document discusses the interface states in metal-oxide-semiconductor (MOS) devices utilizing aligned carbon nanotube (A-CNT) arrays, highlighting their potential as energy-efficient successors to silicon transistors. The authors present a study where they fabricate MOS capacitors based on A-CNT arrays, achieving a record low interface state density and enhanced device performance. The findings emphasize the need for further optimization of gate dielectric growth to improve the reliability and efficienc

Author

东小天

Language

EN