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About this Physics and Astronomy article
Raman study on H+-implantation effects in highly doped n-GaAs by P. Murugan; R. Kesavamoorthy; S. Amirthapandian; R. Saravanan; K. Ramachandran; N. Krishnamurthy is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- P. Murugan; R. Kesavamoorthy; S. Amirthapandian; R. Saravanan; K. Ramachandran; N. Krishnamurthy
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0921-4526)
- Published
- 2002
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)