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Quantification of spin-charge interconversion in highly resistive sputtered Bi$ x$Se$ {1-x}$ with non-local spin valves by Arango, Isabel C.; Choi, Won Young; Pham, Van Tuong; Groen, Inge; Vaz, Diogo C.; Debashis, Punyashloka; Li, Hai; DC, Mahendra; Oguz, Kaan; Chuvilin, Andrey; Hueso, Luis E.; Young, Ian A.; Casanova, Fèlix is a scholarly article available to read on EtoBox.

What is Quantification of spin-charge interconversion in highly resistive sputtered Bi$ x$Se$ {1-x}$ with non-local spin valves about?

The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this regard is sputtered Bi$_x$Se$_{1-x}$. Although there are several techniques to quantify spin-charge interconversion, to date reported values for sputtered Bi$_x$Se$_{1-x}$ have often been overestimated due to spurious effects related to local currents combined with a lack of understanding of the effect of the interfaces and the use of approximations for unknown parameters, such as the spin diffusion length. In the present study, non-local spin valves are used to inject pure spin currents into Bi$_x$Se$_{1-x}$, allowing us to directly obtain its spin diffusion length as well as its spin Hall angle, from 10 K up to 300 K. These values, which are more accurate than those previously reported in sputtered Bi$_x$Se$_{1-x}$, evidence that the efficiency of this material is not exceptional. Indeed, the figure of merit for spin-charge interconversion, given by the product of these two parameters, is slightly under 1 nm. Our work demonstrates the importance of

Author

Arango, Isabel C.; Choi, Won Young; Pham, Van Tuong; Groen, Inge; Vaz, Diogo C.; Debashis, Punyashloka; Li, Hai; DC, Mahendra; Oguz, Kaan; Chuvilin, Andrey; Hueso, Luis E.; Young, Ian A.; Casanova, Fèlix

Published

2023

Language

EN