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What is Diamond/β-Ga2O3 UWBG Photodiode about?

This paper demonstrates an ultrawide bandgap p-n heterojunction composed of p-type diamond and n-type beta gallium oxide (β-Ga2O3) for use as a solar-blind photodiode. The heterojunction was formed through a van der Waals interaction between an exfoliated β-Ga2O3 nanolayer and a diamond substrate. It exhibited good rectifying behavior and high responsivity to UV light, showing potential for applications in power electronics and solar-blind optoelectronics.

Author

ralaga.adedayo

Language

EN