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Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride by Røst, Håkon I.; Cooil, Simon P.; Åsland, Anna Cecilie; Hu, Jinbang; Ali, Ayaz; Taniguchi, Takashi; Watanabe, Kenji; Belle, Branson D.; Holst, Bodil; Sadowski, Jerzy T.; Mazzola, Federico; Wells, Justin W. is a scholarly article available to read on EtoBox.

What is Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride about?

Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of non-volatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their applications. Hexagonal boron nitride (hBN) is a wide energy bandgap semiconductor, showing immense potential as a platform for low-dimensional device heterostructures. It is an inert dielectric used for gated devices, having a negligible orbital hybridization when placed in contact with other systems. Despite its inertness, we discover a large electron mass enhancement in few-layer hBN affecting the lifetime of the $\pi$-band states. We show that the renormalization is phonon-mediated and consistent with both single- and multiple-phonon scattering events. Our findings thus unveil a so-far unknown many-body state in a wide-bandgap insulator, having important implications for devices using hBN as one of their building blocks.

Author

Røst, Håkon I.; Cooil, Simon P.; Åsland, Anna Cecilie; Hu, Jinbang; Ali, Ayaz; Taniguchi, Takashi; Watanabe, Kenji; Belle, Branson D.; Holst, Bodil; Sadowski, Jerzy T.; Mazzola, Federico; Wells, Justin W.

Published

2023

Language

EN