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What is 2SK1611 Power F-MOS FET Specifications about?

The document describes the 2SK1611 silicon n-channel power F-MOS FET. It provides key features and specifications such as a high avalanche energy capacity of 20mJ, a drain-source breakdown voltage of 800V, and a low drain-source on-resistance of 3.2-4 ohms. The device is suitable for applications requiring high-speed switching such as in switching power supplies and AC adapters due to its low RDS(on) and fast switching characteristics. Electrical characteristics including cutoff current, leakage current, th

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boled_2

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EN