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Design of a Broadband LNA with Multi-feedback Using 70nm GaAs MHEMT Process by Jin Guan; Min Gong; Bo Gao; Ran Zhang is a Physics and Astronomy article available to read on EtoBox.

What is Design of a Broadband LNA with Multi-feedback Using 70nm GaAs MHEMT Process about?

## Abstract This paper presents a broadband LNA using 70nm GaAs MHEMT process operating from 1.5GHz to 20GHz. The multi-feedback technique and input/output impedance match are applied to compensate the transistor gain roll-off with frequency and optimize the stability and reflection coefficients. The effect of the multi-feedback technique for stability, noise figure, gain flatness, linearity, and S-parameter performance are analyzed and discussed. Among the whole bandwidth, this LNA features gain of average 29.5dB increasing with frequency and noise figure of average 1.15dB. This LNA also achieves good reflection and isolation performance. The consuming of this LNA is blow 150mW and the chip area is less than 1.4mm\*0.8mm. The figure-of-merit (FOM) is about 362.6 (GHz/mW). This LNA could be found its application in high data rate transmission, software defined radio, 5G communication, test instrumentation, wideband radar and other wideband systems.

Who reads Design of a Broadband LNA with Multi-feedback Using 70nm GaAs MHEMT Process?

It is typically read by researchers, students, and practitioners in Physics and Astronomy.

Author
Jin Guan; Min Gong; Bo Gao; Ran Zhang
Publisher
Institute of Physics; IOP Publishing (ISSN 1742-6588)
Published
2020
Field
Physics and Astronomy (Physical Sciences)

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