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This document describes a high-electron mobility transistor (HEMT) with a record power-gain cutoff frequency of 300 GHz. Key aspects that enabled this high frequency include a low-damage gate recess technique, scaled device geometry, and recessed source/drain contacts to reduce short-channel effects and parasitic resistances. A 60nm gate-length HEMT exhibited excellent output resistance and low parasitic resistances, resulting in the record 300 GHz power-gain cutoff frequency.

Author

julio perez

Language

EN