About this Engineering article
An Experimental Memory Cell Using Edge-junction Gates by Geppert, L.; Rajeevakumar, T.; Henkels, W.; Deutsch, U. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Geppert, L.; Rajeevakumar, T.; Henkels, W.; Deutsch, U.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9464)
- Published
- 1983
- Language
- EN
- Field
- Engineering (Physical Sciences)