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The study examines the photoluminescence (PL) characteristics of InAs quantum dots (QDs) subjected to Sb irradiation during growth interruptions. It was discovered that Sb irradiation effectively elongates the emission wavelength and enhances emission efficiency, particularly when applied just before the cover layer growth. The findings suggest that optimizing Sb introduction can improve the optical properties of long-wavelength InAs QDs on GaAs substrates.

Author

abdrahimalsuhli

Language

EN