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Epitaxial growth of Fe/MgO/Ge(0 0 1) heterostructures by M. Cantoni; D. Petti; C. Rinaldi; R. Bertacco is a Engineering article available to read on EtoBox.

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We report on the growth of epitaxial Fe/MgO heterostructures on Ge(0 0 1) by Molecular Beam Epitaxy. The better crystal quality and interfacial chemical sharpness at the oxide-semiconductor interface have been obtained by growing MgO at room temperature, followed by a post-annealing at 773 K, on top of a p(2 Â 1)-Ge(0 0 1) clean surface. The growth of Fe at room temperature followed by annealing at 473 K gives the best epitaxial structure with optimized crystallinity of each layer compatible with limited chemical interdiffusion. Tunneling devices based on the epitaxial Fe/MgO/Ge heterostructure have been micro-fabricated and tested in order to probe the electrical properties of the MgO barrier. The currentvoltage characteristics clearly show that tunneling is the dominant phenomenon, thus indicating that this system is very promising for practical applications in electronics and spintronics.

Who reads Epitaxial growth of Fe/MgO/Ge(0 0 1) heterostructures?

Author

M. Cantoni; D. Petti; C. Rinaldi; R. Bertacco

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0167-9317)

Published

2011

Language

EN

Field

Engineering (Physical Sciences)