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Preparation of Eu2+-doped AlN phosphors by plasma activated sintering by Zhongqi Shi; Wanli Yang; Shujie Bai; Guanjun Qiao; Zhihao Jin is a Materials Science article available to read on EtoBox.

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Eu 2+ -doped AlN phosphors were prepared by plasma activated sintering at 1600-1850 8C for 5 min and using AlN, SiC, and Eu 2 O 3 as starting materials. The effect of Si concentration on the phase purity and photoluminescence (PL) properties of the prepared phosphors was investigated. The doping of Si from SiC favored the formation of pure wurtzite-type AlN phase and doping of Eu 2+ into the AlN lattice. The prepared AlN:Eu 2+ phosphors exhibited a strong blue emission at 465 nm under the excitation at 330 nm when Si was doped. The highest PL intensity was achieved when the phosphors were sintered at 1800 8C.

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Author

Zhongqi Shi; Wanli Yang; Shujie Bai; Guanjun Qiao; Zhihao Jin

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0272-8842)

Published

2011

Language

EN

Field

Materials Science (Physical Sciences)