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DFT+DMFT study on pressure-induced valence instability of CeCoSi by Zhang, Shuai-Kang; Xu, Yuanji; Li, Guojun; Wang, Junshuai; Zhou, Zhongpo; An, Yipeng is a scholarly article available to read on EtoBox.

What is DFT+DMFT study on pressure-induced valence instability of CeCoSi about?

Rare-earth compounds RCoSi exhibit unique properties, with distinct structural behaviors depending on whether R is a light, middle or heavy rare-earth element. Among them, CeCoSi undergoes a structural phase transition under high pressure, with the phase transition pressure increasing as temperature rises. Some experimental studies suggest that the transition is closely related to the behavior of Ce-4f electrons. In this work, we systematically studied the evolution of the electronic structure of CeCoSi with temperature and pressure. First, we used the DFT+DMFT to calculate the energy-volume curve of CeCoSi, which was in good agreement with the experimental results and far superior to the DFT method. Next, we studied the electronic structure of CeCoSi under different pressures and temperatures using DFT+DMFT. Our results show that CeCoSi is a Kondo metal with hybridization of Ce-4f and Co-3d. As pressure increases, the renormalization factor Z of Ce-4f5/2 increases, the occupancy number of Ce-4f electrons decreases, and CeCoSi transitions to a mixed-valence state at ~5.5 GPa in 100 K. The pressure of the quantum phase transition PQ is slightly higher than the experimentally observe

Author

Zhang, Shuai-Kang; Xu, Yuanji; Li, Guojun; Wang, Junshuai; Zhou, Zhongpo; An, Yipeng

Published

2025

Language

EN