About this Engineering article
A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT by Duh, K.H.G.; Chao, P.C.; Liu, S.M.J.; Ho, P.; Kao, M.Y.; Ballingall, J.M. is a Engineering article available to read on EtoBox.
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- Author
- Duh, K.H.G.; Chao, P.C.; Liu, S.M.J.; Ho, P.; Kao, M.Y.; Ballingall, J.M.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 1051-8207)
- Published
- 1991
- Field
- Engineering (Physical Sciences)