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About this Engineering article
Design and Analysis of InGaN-GaN Modulation Doped Field-Effect Transistors (MODFETs) for Over 60 GHz Operation by Islam, S. K. ;Jain, F. C. ;Zhao, G. ;Heller, E. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Islam, S. K. ;Jain, F. C. ;Zhao, G. ;Heller, E.
- Publisher
- Springer; Springer-Verlag; Kluwer Academic Publishers; Springer Science and Business Media LLC (ISSN 0195-9271)
- Published
- 1998
- Field
- Engineering (Physical Sciences)
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