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About this Engineering article
Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V by Lee, Kean B.; Guiney, Ivor; Jiang, Sheng; Zaidi, Zaffar H.; Qian, Hongtu; Wallis, David J.; Uren, Michael J.; Kuball, Martin; Humphreys, Colin J.; Houston, Peter A. is a Engineering article available to read on EtoBox.
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- Author
- Lee, Kean B.; Guiney, Ivor; Jiang, Sheng; Zaidi, Zaffar H.; Qian, Hongtu; Wallis, David J.; Uren, Michael J.; Kuball, Martin; Humphreys, Colin J.; Houston, Peter A.
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; Japan Soc of Applied Physics; IOP Publishing (ISSN 1882-0778)
- Published
- 2015
- Field
- Engineering (Physical Sciences)