Opening book details…
About this Engineering article
Mathematical modeling of nanoscale MOS capacitance in the presence of depletion and energy quantization in a poly-silicon gate by Chaudhry, Amit; Roy, J. N is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Chaudhry, Amit; Roy, J. N
- Publisher
- IOP Publishing; Institute of Physics Publishing (ISSN 1674-4926)
- Published
- 2010
- Language
- EN
- Field
- Engineering (Physical Sciences)