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Can I read Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers on EtoBox?
Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers by V. Darakchieva; T. Paskova; M. Schubert; P.P. Paskov; H. Arwin; B. Monemar; D. Hommel; M. Heuken; J. Off; B.A. Haskell; P.T. Fini; J.S. Speck; S. Nakamura is a Engineering article available to read on EtoBox.
What is Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers about?
We have studied phonons in two types of anisotropically strained GaN films: c-plane GaN films grown on a-plane sapphire and a-plane GaN films grown on r-plane sapphire. The anisotropic strain in the films is determined by high-resolution X-ray diffraction (HRXRD) in different measuring geometries and the phonon parameters have been assessed by generalized infrared spectroscopic ellipsometry (GIRSE). The effect of strain anisotropy on GaN phonon frequencies is presented and the phonon deformation potentials a A 1 ðTOÞ , b A 1 ðTOÞ , c E 1 ðTOÞ and c E 1 ðLOÞ are determined.
Who reads Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- V. Darakchieva; T. Paskova; M. Schubert; P.P. Paskov; H. Arwin; B. Monemar; D. Hommel; M. Heuken; J. Off; B.A. Haskell; P.T. Fini; J.S. Speck; S. Nakamura
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 2007
- Language
- EN
- Field
- Engineering (Physical Sciences)