Opening book details…
About this Engineering article
0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer by Omura, Y.; Nakashima, S.; Izumi, K.; Ishii, T. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Omura, Y.; Nakashima, S.; Izumi, K.; Ishii, T.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 1993
- Field
- Engineering (Physical Sciences)
More by Omura, Y.; Nakashima, S.; Izumi, K.; Ishii, T.
Browse all works by Omura, Y.; Nakashima, S.; Izumi, K.; Ishii, T.