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Interface and Gate Bias Dependence Responses of Sensing Organic Thin-film Transistors by Maria Cristina Tanese; Daniel Fine; Ananth Dodabalapur; Luisa Torsi is a Engineering article available to read on EtoBox.
What is Interface and Gate Bias Dependence Responses of Sensing Organic Thin-film Transistors about?
The effects of the exposure of organic thin-film transistors, comprising different organic semiconductors and gate dielectrics, to 1-pentanol are investigated. The transistor sensors exhibited an increase or a decrease of the transient source-drain current in the presence of the analyte, most likely as a result of a trapping or of a doping process of the organic active layer. The occurrence of these two effects, that can also coexist, depend on the gate-dielectric/organic semiconductor interface and on the applied gate field. Evidence of a systematic and sizable response enhancement for an OTFT sensor operated in the enhanced mode is also presented.
Who reads Interface and Gate Bias Dependence Responses of Sensing Organic Thin-film Transistors?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Maria Cristina Tanese; Daniel Fine; Ananth Dodabalapur; Luisa Torsi
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0956-5663)
- Published
- 2005
- Language
- EN
- Field
- Engineering (Physical Sciences)