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Can I read Eyring Acceleration Model in Thick Nitride/oxide Dielectrics on EtoBox?
Eyring Acceleration Model in Thick Nitride/oxide Dielectrics by S.B. Evseev is a Engineering article available to read on EtoBox.
What is Eyring Acceleration Model in Thick Nitride/oxide Dielectrics about?
A kinetic model is developed, which can predict failure times in thick nitride/oxide dielectric stacks at elevated temperatures. It is shown that failure time depends on the applied bias stress and temperature and, in the general case, obeys a two-stress Arrhenius-type relationship known as an Eyring acceleration model: where t f is the failure time before charge saturation condition occurs, k is the Boltzmann constant, T is the absolute temperature, DH is the activation energy, M and N are the voltage and time dependent parameters, respectively, V STRESS is the externally applied voltage stress and B is a proportionality constant. Furthermore it is demonstrated that the obtained kinetic equation is physically related to the nitride conduction, described by Frenkel-Poole equation.
Who reads Eyring Acceleration Model in Thick Nitride/oxide Dielectrics?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- S.B. Evseev
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)
- Published
- 2007
- Language
- EN
- Field
- Engineering (Physical Sciences)