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About this Engineering article
GaN enhancement mode metal-oxide semiconductor field effect transistors by Y. Irokawa; Y. Nakano; M. Ishiko; T. Kachi; J. Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; C.-C. Pan; G.-T. Chen; J.-I. Chyi is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Y. Irokawa; Y. Nakano; M. Ishiko; T. Kachi; J. Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; C.-C. Pan; G.-T. Chen; J.-I. Chyi
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)
- Published
- 2005
- Language
- EN
- Field
- Engineering (Physical Sciences)