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Can I read SPICE modelling of hot-carrier degradation in Si1–xGex S/D and HfSiON based pMOS transistors on EtoBox?
SPICE modelling of hot-carrier degradation in Si1–xGex S/D and HfSiON based pMOS transistors by J. Martin-Martinez; E. Amat; M.B. Gonzalez; P. Verheyen; R. Rodríguez; M. Nafría; X. Aymerich; E. Simoen is a Engineering article available to read on EtoBox.
What is SPICE modelling of hot-carrier degradation in Si1–xGex S/D and HfSiON based pMOS transistors about?
Hot-carrier degradation in pMOS transistors with Si 1-x Ge x implantations in the source and drain areas is analyzed (SiGe S/D). A simulation methodology is developed to translate the effects to circuit simulators. This methodology is applied to study hot-carrier degradation in CMOS inverters designed with SiGe S/D pMOS transistors. The results show that although pMOS transistors with embedded SiGe S/D have a better device performance, these devices are more sensitive to hot-carrier degradation at both the device and circuit levels.
Who reads SPICE modelling of hot-carrier degradation in Si1–xGex S/D and HfSiON based pMOS transistors?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- J. Martin-Martinez; E. Amat; M.B. Gonzalez; P. Verheyen; R. Rodríguez; M. Nafría; X. Aymerich; E. Simoen
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)
- Published
- 2010
- Language
- EN
- Field
- Engineering (Physical Sciences)