Opening book details…
Can I read Analysis of the relation between leakage current and dislocations in GaN-based light-emitting devices on EtoBox?
Analysis of the relation between leakage current and dislocations in GaN-based light-emitting devices by S. W. Lee; D. C. Oh; H. Goto; J. S. Ha; H. J. Lee; T. Hanada; M. W. Cho; S. K. Hong; H. Y. Lee; S. R. Cho; J. W. Choi; J. H. Choi; J. H. Jang; J. E. Shin; J. S. Lee; T. Yao is a Engineering article available to read on EtoBox.
What is Analysis of the relation between leakage current and dislocations in GaN-based light-emitting devices about?
## Abstract In order to understand the origin of leakage current, light emitting devices were grown on two different templates with apparently different dislocation density: one on thin GaN template (∼2 μm) with higher dislocation density (low × 10^9^ cm^–2^) prepared by metal‐organic vapor‐phase epitaxy (sample A), and the other on thick GaN template (∼20 μm) with comparatively low dislocation density (high × 10^8^ cm^–2^) by hydride vapor‐phase epitaxy (sample B). Especially, the template B showed very low value of the dislocation density for a screw component, 2.2 × 10^7^ cm^–2^ evaluated by transmission electron microscope and 2.3 × 10^7^ cm^–2^ approximated by the Williamson‐Hall plot which was evaluated by high resolution X‐ray diffraction, respectively. On the other hand, sample A showed one order higher, low × 10^8^ cm^–2^, than that of sample B for a screw component. Sample A showed the larger leakage current (more than two orders of magnitude) than sample B in a forward‐biased region and a reverse‐biased region also. It is expected that the screw dislocation were strongly contributed to the leakage current of forward and reverse I‐V regions in LEDs. (© 2007 WILEY‐VCH Verl
Who reads Analysis of the relation between leakage current and dislocations in GaN-based light-emitting devices?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- S. W. Lee; D. C. Oh; H. Goto; J. S. Ha; H. J. Lee; T. Hanada; M. W. Cho; S. K. Hong; H. Y. Lee; S. R. Cho; J. W. Choi; J. H. Choi; J. H. Jang; J. E. Shin; J. S. Lee; T. Yao
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)
- Published
- 2007
- Language
- EN
- Field
- Engineering (Physical Sciences)