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In other words, when oxidants (H 2 O 2 ) are reduced on the surfaces of noble metal catalysts, positive holes (h + ) are generated. After the removal of electrons from metal particles, the potential of the metal shifts towards a positive value to a level enabling the injection of h + into the silicon substrate. Finally, anodic oxidation and the dissolution of silicon take place in the chemical etchant containing HF. Various types of silicon microstructures such as deep straight nanopores and helical silicon nanopores have been prepared by metal-assisted chemical etching (Yae et al, 2003;Tsujino & Matsumura, 2005a;Tsujino & Matsumura, 2005b). These microstructures are expected to be used for improving the light-emitting properties and conversion efficiency of solar cells. The formation of porous silicon by metal-assisted chemical etching can proceed in the presence of not only Au, Pt, and Au-Pd particles but also other noble metals such as Ag and Pd. Recently, we have reported the fabrication of ordered Si, GaAs and InP microstructures such as convex arrays and nanopore patterns with regular periodicity of the order of micrometres by combining colloidal crystal templating and site-s

Author

Sachiko Ono; Hidetaka Asoh

Publisher

InTech

Published

2012

Language

EN