Skip to content

Opening book details…

About this Materials Science article

SiGe doped-channel field-effect transistor by C.H. Liu; S.J. Chang; K.T. Lam; Y.S. Sun is a Materials Science article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Materials Science.

Author
C.H. Liu; S.J. Chang; K.T. Lam; Y.S. Sun
Publisher
Elsevier Science; Elsevier ; Elsevier BV (ISSN 0254-0584)
Published
2007
Language
EN
Field
Materials Science (Physical Sciences)

More by C.H. Liu; S.J. Chang; K.T. Lam; Y.S. Sun

Browse all works by C.H. Liu; S.J. Chang; K.T. Lam; Y.S. Sun