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Recovery of dry etch-induced damage of nano-patterned GaN-based light-emitting diodes by rapid-thermal-annealing by Hyun-Gi Hong; S.-S. Kim; D.-Y. Kim; Takhee Lee; Kyoung-Kook Kim; June-O. Song; J. H. Cho; Tae-Yeon Seong is a Materials Science article available to read on EtoBox.
What is Recovery of dry etch-induced damage of nano-patterned GaN-based light-emitting diodes by rapid-thermal-annealing about?
## Abstract The effect of rapid‐thermal‐annealing on the performance of near‐UV GaN‐based light‐emitting diodes (LEDs) fabricated with nano‐patterned p‐type electrodes has been investigated. One‐dimensional (1‐D) nano‐patterns were formed on Cu‐doped indium oxide (CIO)/indium tin oxide (ITO) p‐electrode by sur‐ face relief grating and dry etching techniques. After the nano‐patterning, some of the samples are rapid‐thermal‐annealed at 530 and 630 °C in either air or nitrogen ambient. LEDs made with samples annealed 530 °C show much better electrical characteristics as compared to unannealed samples. In particular, LEDs with samples annealed 530 °C in air show higher output power (at 20 mA) and much reduced leakage current as compared to LEDs with unannealed samples. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Who reads Recovery of dry etch-induced damage of nano-patterned GaN-based light-emitting diodes by rapid-thermal-annealing?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Hyun-Gi Hong; S.-S. Kim; D.-Y. Kim; Takhee Lee; Kyoung-Kook Kim; June-O. Song; J. H. Cho; Tae-Yeon Seong
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)
- Published
- 2007
- Language
- EN
- Field
- Materials Science (Physical Sciences)