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Quaternary AlInGaN multiple quantum well 368 nm light-emitting diode by Te-Chung Wang; Hao-Chung Kuo; Zheng-Hong Lee; Chang-Cheng Chuo; Min-Ying Tsai; Ching-En Tsai; Tsin-Dong Lee; Tien-Chang Lu; Jim Chi is a Engineering article available to read on EtoBox.
What is Quaternary AlInGaN multiple quantum well 368 nm light-emitting diode about?
We report high output power from AlInGaN multiple quantum well (MQW) ultraviolet light-emitting diodes. The high Al containing cladding layer, electron blocking layer and p-contact layer were chosen for transparency at 365 nm to reduce the internal absorption, reduce electron overflow and enhance output power. The UV output power was as high as 1.52 mW at 20 mA at 368 nm under room temperature CW operation. The maximum output power in CW operation is 11 mW at 170 mA. In this letter, we demonstrate a helpful and easy way to measure and calculate the junction temperature of AlInGaN UVLEDs.
Who reads Quaternary AlInGaN multiple quantum well 368 nm light-emitting diode?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Te-Chung Wang; Hao-Chung Kuo; Zheng-Hong Lee; Chang-Cheng Chuo; Min-Ying Tsai; Ching-En Tsai; Tsin-Dong Lee; Tien-Chang Lu; Jim Chi
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 2006
- Language
- EN
- Field
- Engineering (Physical Sciences)