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About this Engineering article
Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various VGS Biases by Zhu, Zhengyun; Xu, Hongyi; Liu, Li; Ren, Na; Sheng, Kuang is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Zhu, Zhengyun; Xu, Hongyi; Liu, Li; Ren, Na; Sheng, Kuang
- Publisher
- Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers Inc.; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 2168-6777)
- Published
- 2020
- Field
- Engineering (Physical Sciences)
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