Can I read Numerical simulation of impedance and admittance of OLEDs on EtoBox?

Numerical simulation of impedance and admittance of OLEDs by N. D. Nguyen; M. Schmeits is a Materials Science article available to read on EtoBox.

What is Numerical simulation of impedance and admittance of OLEDs about?

## Abstract The electrical characteristics of organic light‐emitting devices are calculated for the dc and ac regimes by numerically solving the basic semiconductor equations under steady‐state and small‐signal conditions. For a given structure, the dc and ac electric potential and electric field, the electron and hole concentrations, as well as the different components of the current density are obtained as function of the one‐dimensional spatial coordinate. This approach allows a detailed microscopic description of the dependencies of these quantities on the applied steady‐state voltage __V__~0~ and the frequency of the modulating voltage. The final output consists in the frequency‐dependent complex admittance and impedance of the device, the real and imaginary parts of which are the experimentally‐available data. As a typical example, we show the results for a two‐layer structure where α‐NPD is the hole‐transporting material and Alq~3~ the electron‐transporting material. The anode is made of ITO and Al/LiF composes the cathode. The admittance and impedance curves, yielded by the numerical simulation as functions of the modulation frequency, are fitted by an equivalent electrical

Who reads Numerical simulation of impedance and admittance of OLEDs?

Author

N. D. Nguyen; M. Schmeits

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)

Published

2006

Language

EN

Field

Materials Science (Physical Sciences)