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Can I read Schottky barrier height of a new ohmic contact NiSi2 to n-type 6H-SiC on EtoBox?
Schottky barrier height of a new ohmic contact NiSi2 to n-type 6H-SiC by Tomonori Nakamura; Masataka Satoh is a Engineering article available to read on EtoBox.
What is Schottky barrier height of a new ohmic contact NiSi2 to n-type 6H-SiC about?
We present a new ohmic contact material NiSi 2 to n-type 6H-SiC with a low specific contact resistance. NiSi 2 films are prepared by annealing the Ni and Si films separately deposited on (0 0 0 1)-oriented 6H-SiC substrates with carrier concentrations (n) ranging from 5:8 Â 10 16 to 2:5 Â 10 19 cm À3 . The deposited films are annealed at 900 °C for 10 min in a flow of Ar gas containing 5 vol.% H 2 gas. The specific contact resistance of NiSi 2 contact exponentially decreases with increasing carrier concentrations of substrates. NiSi 2 contacts formed on the substrates with n 1⁄4 2:5 Â 10 19 cm À3 show a relatively low specific contact resistance with 3:6 Â 10 À6 X cm 2 . Schottky barrier height of NiSi 2 to n-type 6H-SiC is estimated to be 0:40 AE 0:02 eV using a theoretical relationship for the carrier concentration dependence of the specific contact resistance.
Who reads Schottky barrier height of a new ohmic contact NiSi2 to n-type 6H-SiC?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Tomonori Nakamura; Masataka Satoh
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 2002
- Language
- EN
- Field
- Engineering (Physical Sciences)