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Hydrothermally grown ZnO buffer layer for the growth of highly (4 wt%) Ga-doped ZnO epitaxial thin films on MgAl2O4 (1 1 1) substrates by Seung Wook Shin; Ye Bin Kwon; A.V. Moholkar; Gi-Seok Heo; In Ok Jung; Jong-Ha Moon; Jin Hyeok Kim; Jeong Yong Lee is a Engineering article available to read on EtoBox.

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Gallium (4 wt%) doped ZnO (GZO) thin films were deposited on hydrothermally grown ZnO buffered and non-buffered MgAl 2 O 4 (1 1 1) substrates by RF magnetron sputtering technique at a growth temperature of 250 1C. The epitaxial ZnO buffer layer was deposited on the MgAl 2 O 4 (1 1 1) substrate by a hydrothermal technique using aqueous solutions of zinc nitrate hexahydrate, ammonium nitrate and ammonium hydroxide at 90 1C. The effect of the ZnO buffer layer on the crystallinity, epitaxial nature, surface morphology, optical and electrical properties of the GZO thin films is investigated. X-ray diffraction and transmission electron microscopy showed that the hydrothermally grown ZnO buffer layer and GZO thin film grown on the hydrothermally grown ZnO buffered substrate were grown epitaxially with an orientation relationship of ð0001Þ1⁄21120 GZO :ð111Þ1⁄2112 MgAl 2 O4 . However, the GZO thin films grown on the non-buffered substrate are polycrystalline in nature with a hexagonal wurtzite phase. The room temperature photoluminescence spectra of the GZO epitaxial thin films grown on the buffered substrate revealed a sharp near band edge emission peak and a lower broad deep-level emissio

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Author

Seung Wook Shin; Ye Bin Kwon; A.V. Moholkar; Gi-Seok Heo; In Ok Jung; Jong-Ha Moon; Jin Hyeok Kim; Jeong Yong Lee

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2011

Language

EN

Field

Engineering (Physical Sciences)