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Reconstruction of Doping Profiles in Semiconductor Materials Using Optical Tomography by Luigi Zeni; Romeo Bernini; Rocco Pierri is a Engineering article available to read on EtoBox.
What is Reconstruction of Doping Profiles in Semiconductor Materials Using Optical Tomography about?
A non-destructive and contactless method for doping pro®le characterisation in semiconductor materials is presented and analysed numerically in a one-dimensional geometry. It is based on the capability of optical diraction tomography to reconstruct the complex refraction index of an object, illuminated at dierent wavelengths, starting from the measurements of scattered ®eld. Using a suitable model (Drude±Lorenz) to relate the complex refractive index of a semiconductor, at infrared wavelengths, to the carrier concentration we establish a relation between the scattered ®eld intensity and carrier concentration. The problem is treated as an inverse type and the solution is de®ned as the global minimum of a proper functional. The eectiveness of this approach is demonstrated by simulating numerically the experiment.
Who reads Reconstruction of Doping Profiles in Semiconductor Materials Using Optical Tomography?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Luigi Zeni; Romeo Bernini; Rocco Pierri
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 1999
- Language
- EN
- Field
- Engineering (Physical Sciences)