Opening book details…
Can I read A MIS device structure for detection of chemically induced charge carriers on EtoBox?
A MIS device structure for detection of chemically induced charge carriers by X. Liu; B.Roldan Cuenya; E.W. McFarland is a Engineering article available to read on EtoBox.
What is A MIS device structure for detection of chemically induced charge carriers about?
Chemically induced electronic excitations were detected from adsorption of molecular ethylene and atomic oxygen on large-area Au/Al 2 O 3 /n-Si metal/insulator/semiconductor (MIS) diodes. The devices were fabricated with oxide thicknesses varying between 0 and 8 nm. For devices with an oxide layer less than ∼3 nm and relatively energetic surface adsorption reactions, electrons are excited by non-adiabatic energy transfer above the Fermi level and travel ballistically into the semiconductor. For low energy reactions and thicker oxides, charge transport in the device is dominated by ballistic "hot" holes created below the Fermi level which travel to the metal-insulator junction to electron donor states resulting in an effective forward-bias charging current. The energy-band structure of silicon as well as the density of interfacial states of the metal-insulator junctions strongly influences the electronic characteristics of the device. These MIS devices are suitable as molecular sensors for the detection of chemical species with low adsorption energies, such as hydrocarbons.
Who reads A MIS device structure for detection of chemically induced charge carriers?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- X. Liu; B.Roldan Cuenya; E.W. McFarland
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0925-4005)
- Published
- 2004
- Language
- EN
- Field
- Engineering (Physical Sciences)