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We have studied the growth characteristics of Al V Ga \V N/GaN and electronic properties of Au/Al V Ga \V N structures grown by the MOCVD variation of x. The Al V Ga \V N layers were grown on undoped GaN/sapphire (0 0 0 1) epitaxial layers in a horizontal MOCVD reactor at a reduced pressure of 300 Torr. Al composition, x in Al V Ga \V N/GaN determined by DCXRD are 0.12, 0.15, 0.19 and 0.2, respectively. Nevertheless, enough feeding of TMA (trimethylaluminum) source during the growth at 300 Torr and 10703C, the mole fraction x in Al V Ga \V N did not increase any more above 0.2. The FWHMs of the DCXRD for (0 0 0 2) di!raction from Al Ga N, Al Ga N, Al Ga N and Al Ga N are 450, 469, 502 and 474 arcsec, respectively. While the carrier concentration of Al V Ga \V N layers increases, the mobility decreases with the increase of Al mole fraction x. After fabricating Au/Al V Ga \V N Schottky diodes, electronic properties of the structures were evaluated by I}< measurement as a function of x. The breakdown voltages of Au/Al V Ga \V N diodes at reverse bias mode were in the range of 2.5}15 V. And, the turn on voltages at forward bias mode were in the range of 0.5}5.0 V with the variation of

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Author

Cheul-Ro Lee

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2000

Language

EN

Field

Engineering (Physical Sciences)