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Competing Zero-Field Chern Insulators in Superconducting Twisted Bilayer Graphene by Petr Stepanov; Ming Xie; Takashi Taniguchi; Kenji Watanabe; Xiaobo Lu; Allan H. MacDonald; B. Andrei Bernevig; Dmitri K. Efetov is a Physics and Astronomy article available to read on EtoBox.

What is Competing Zero-Field Chern Insulators in Superconducting Twisted Bilayer Graphene about?

The discovery of magic angle twisted bilayer graphene has unveiled a rich variety of superconducting, magnetic, and topologically nontrivial phases. Here, we show that the zero-field states at odd integer filling factors in h-BN nonaligned devices are consistent with symmetry broken Chern insulators, as is evidenced by the observation of the anomalous Hall effect near moiré cell filling factor ν 1⁄4 þ1. The corresponding Chern insulator has a Chern number C 1⁄4 AE1 and a relatively high Curie temperature of T c ≈ 4.5 K. In a perpendicular magnetic field above B > 0.5 T we observe a transition of the ν 1⁄4 þ1 Chern insulator from Chern number C 1⁄4 AE1 to C 1⁄4 3, characterized by a quantized Hall plateau with R yx 1⁄4 h=3e 2 . These observations demonstrate that interaction-induced symmetry breaking leads to zero-field ground states that include almost degenerate and closely competing Chern insulators, and that states with larger Chern numbers couple most strongly to the B field. In addition, the device reveals strong superconducting phases with critical temperatures of up to T c ≈ 3.5 K. By providing the first demonstration of a system that allows gate-induced transitions between

Who reads Competing Zero-Field Chern Insulators in Superconducting Twisted Bilayer Graphene?

Author

Petr Stepanov; Ming Xie; Takashi Taniguchi; Kenji Watanabe; Xiaobo Lu; Allan H. MacDonald; B. Andrei Bernevig; Dmitri K. Efetov

Publisher

American Physical Society (APS)

Published

2021

Language

EN

Field

Physics and Astronomy (Physical Sciences)