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Mobility and Velocity Enhancement Effects of High Uniaxial Stress on Si (100) and (110) Substrates for Short-Channel pFETs by Mayuzumi, S.; Yamakawa, S.; Kosemura, D.; Takei, M.; Nagata, K.; Akamatsu, H.; Wakabayashi, H.; Amari, K.; Tateshita, Y.; Tsukamoto, M.; Ohno, T.; Ogura, A.; Nagashima, N. is a Engineering article available to read on EtoBox.

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Author
Mayuzumi, S.; Yamakawa, S.; Kosemura, D.; Takei, M.; Nagata, K.; Akamatsu, H.; Wakabayashi, H.; Amari, K.; Tateshita, Y.; Tsukamoto, M.; Ohno, T.; Ogura, A.; Nagashima, N.
Publisher
IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
Published
2010
Field
Engineering (Physical Sciences)

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