About this Engineering article
Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation by K. Matsumoto; S. Higashi; H. Murakami; S. Miyazaki is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- K. Matsumoto; S. Higashi; H. Murakami; S. Miyazaki
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2010
- Language
- EN
- Field
- Engineering (Physical Sciences)