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The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics by C.H. Liu; P.C. Juan; J.Y. Lin is a Engineering article available to read on EtoBox.
What is The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics about?
## voltage shift Conduction mechanism Lanthanum dopant positioning at HfO 2 ultra-thin films was achieved by the co-sputtering method. The physical properties of graded doping HfO 2 /HfLaO/p-Si and HfLaO/HfO 2 /p-Si structures after 850 °C postannealing were compared. The thickness of the monolayer was analyzed by X-ray reflectivity and confirmed by the multiple beam interference model. The HfO 2 and silicate phases were characterized by X-ray diffraction patterns. It is found that crystallization depends on the ratio of stacked film thicknesses, and the HfLaO/HfO 2 /Si structure has more silicate formation at the interface than the HfO 2 /HfLaO/Si structure. Metalinsulator-semiconductor capacitors were fabricated. The electrical properties including leakage current, conduction mechanism, flatband voltage shift, and barrier height were studied.
Who reads The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- C.H. Liu; P.C. Juan; J.Y. Lin
- Publisher
- Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
- Published
- 2010
- Language
- EN
- Field
- Engineering (Physical Sciences)